968 research outputs found

    Examining trade-offs between social, psychological, and energy potential of urban form

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    Urban planners are often challenged with the task of developing design solutions which must meet multiple, and often contradictory, criteria. In this paper, we investigated the trade-offs between social, psychological, and energy potential of the fundamental elements of urban form: the street network and the building massing. Since formal methods to evaluate urban form from the psychological and social point of view are not readily available, we developed a methodological framework to quantify these criteria as the first contribution in this paper. To evaluate the psychological potential, we conducted a three-tiered empirical study starting from real world environments and then abstracting them to virtual environments. In each context, the implicit (physiological) response and explicit (subjective) response of pedestrians were measured. To quantify the social potential, we developed a street network centrality-based measure of social accessibility. For the energy potential, we created an energy model to analyze the impact of pure geometric form on the energy demand of the building stock. The second contribution of this work is a method to identify distinct clusters of urban form and, for each, explore the trade-offs between the select design criteria. We applied this method to two case studies identifying nine types of urban form and their respective potential trade-offs, which are directly applicable for the assessment of strategic decisions regarding urban form during the early planning stages

    Grenzen europäischer Normgebung: EU-Kompetenzen und Europäische Grundrechte

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    Fünf Jahre nach Inkrafttreten des Vertrages von Lissabon haben führende Europarechtler bei einem Symposium zu den Grenzen Europäischer Normgebung Zwischenbilanz gezogen, wo die EU bei Fragen der Rechtssetzung und des Grundrechtsschutzes im Mehrebenensystem heute steht. Angesichts der stetig wachsenden Zahl europäischer Rechtsnormen, einer inzwischen 28 Mitgliedstaaten umfassenden Union und der wachsenden Europaskepsis vieler Bürger ein aktuelles wie richtungweisendes Thema

    Electronic Structure Shift of Deep Nanoscale Silicon by SiO2_2- vs. Si3_3N4_4-Embedding as Alternative to Impurity Doping

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    Conventional impurity doping of deep nanoscale silicon (dns-Si) used in ultra large scale integration (ULSI) faces serious challenges below the 14 nm technology node. We report on a new fundamental effect in theory and experiment, namely the electronic structure of dns-Si experiencing energy offsets of ca. 1 eV as a function of SiO2_2- vs. Si3_3N4_4-embedding with a few monolayers (MLs). An interface charge transfer (ICT) from dns-Si specific to the anion type of the dielectric is at the core of this effect and arguably nested in quantum-chemical properties of oxygen (O) and nitrogen (N) vs. Si. We investigate the size up to which this energy offset defines the electronic structure of dns-Si by density functional theory (DFT), considering interface orientation, embedding layer thickness, and approximants featuring two Si nanocrystals (NCs); one embedded in SiO2_2 and the other in Si3_3N4_4. Working with synchrotron ultraviolet photoelectron spectroscopy (UPS), we use SiO2_2- vs. Si3_3N4_4-embedded Si nanowells (NWells) to obtain their energy of the top valence band states. These results confirm our theoretical findings and gauge an analytic model for projecting maximum dns-Si sizes for NCs, nanowires (NWires) and NWells where the energy offset reaches full scale, yielding to a clear preference for electrons or holes as majority carriers in dns-Si. Our findings can replace impurity doping for n/p-type dns-Si as used in ultra-low power electronics and ULSI, eliminating dopant-related issues such as inelastic carrier scattering, thermal ionization, clustering, out-diffusion and defect generation. As far as majority carrier preference is concerned, the elimination of those issues effectively shifts the lower size limit of Si-based ULSI devices to the crystalization limit of Si of ca. 1.5 nm and enables them to work also under cryogenic conditions.Comment: 14 pages, 17 Figures with a total 44 graph

    Aharonov-Bohm oscillations in p-type GaAs quantum rings

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    We have explored phase coherent transport of holes in two p-type GaAs quantum rings with orbital radii 420 nm and 160 nm fabricated with AFM oxidation lithography. Highly visible Aharonov-Bohm (AB) oscillations are measured in both rings, with an amplitude of the oscillations exceeding 10% of the total resistance in the case of the ring with a radius of 160 nm. Beside the h/e oscillations, we resolve the contributions from higher harmonics of the AB oscillations. The observation of a local resistance minimum at B=0 T in both rings is a signature of the destructive interference of the holes' spins. We show that this minimum is related to the minimum in the h/2e oscillations.Comment: Proceedings of EP2DS-17, Genova 2007; Accepted for Physica E; 3 pages, 3 figure

    Income-, education- and gender-related inequalities in out-of-pocket health-care payments for 65+ patients - a systematic review

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    BACKGROUND: In all OECD countries, there is a trend to increasing patients' copayments in order to balance rising overall health-care costs. This systematic review focuses on inequalities concerning the amount of out-of-pocket payments (OOPP) associated with income, education or gender in the Elderly aged 65+. METHODS: Based on an online search (PubMed), 29 studies providing information on OOPP of 65+ beneficiaries in relation to income, education and gender were reviewed. RESULTS: Low-income individuals pay the highest OOPP in relation to their earnings. Prescription drugs account for the biggest share. A lower educational level is associated with higher OOPP for prescription drugs and a higher probability of insufficient insurance protection. Generally, women face higher OOPP due to their lower income and lower labour participation rate, as well as less employer-sponsored health-care. CONCLUSIONS: While most studies found educational and gender inequalities to be associated with income, there might also be effects induced solely by education; for example, an unhealthy lifestyle leading to higher payments for lower-educated people, or exclusively gender-induced effects, like sex-specific illnesses. Based on the considered studies, an explanation for inequalities in OOPP by these factors remains ambiguous

    On the Location of Boron in SiO2‐embedded Si Nanocrystals – An X‐ray Absorption Spectroscopy and Density Functional Theory Study

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    Doping of silicon nanostructures is crucial to understand their properties and to enhance their potential in various fields of application. Herein, SiO2-embedded Si nanocrystals (quantum dots) ≈3–6 nm in diameter are used as a model system to study the incorporation of B dopants by X-ray absorption near-edge spectroscopy (XANES). Such samples represent a model system for ultimately scaled, 3D-confined Si nanovolumes. The analysis is complemented by real-space density functional theory to calculate the 1s (K shell) electron binding energies of B in 11 different, thermodynamically stable configurations of the Si/SiOx/SiO2 system. Although no indications for a substitutional B-acceptor configuration are found, the predominant O coordination of B indicates the preferred B incorporation into the SiO2 matrix and near the Si-nanocrystal/SiO2 interface, which is inherently incompatible with charge carrier generation by dopants. It is concluded that B doping of ultrasmall Si nanostructures fails due to a lack of B incorporation onto Si lattice sites that cannot be overcome by increasing the B concentration. The inability to efficiently insert B into Si nanovolumes appears to be a boron-specific fundamental obstacle for electronic doping (e.g., not observed for phosphorus) that adds to the established nanosize effects, namely, increased dopant activation and ionization energies

    COMPUTER-SUPPORTED SIMULATIONS FOR URBAN PLANNING

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    The idea about a simulation program to support urban planning is explained: Four different, clearly defined developing paths can be calculated for the rebuilding of a shrinking town. Aided by self-organization principles, a complex system can be created. The dynamics based on the action patterns of single actors, whose behaviour is cyclically depends on the generated structure. Global influences, which control the development, can be divided at a spatial, socioeconomic, and organizational-juridical level. The simulation model should offer conclusions on new planning strategies, especially in the context of the creation process of rebuilding measures. An example of a transportation system is shown by means of prototypes for the visualisation of the dynamic development process
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